LN is a kind of pyroelectric material. It can be made into a sensitive layer belonging to photoelectric detector’s sensitive element. Usually, the thickness of LN wafer is 0.5mm and that is beyond the requirement for thickness of photoelectric sensitive element. Due to that, LN wafer must be disposed of by bonding, thinning and polishing process. The process mainly contain RZJ-304 photoresist bonding, grinding, polishing, stripping liquid stripping and acetone cleaning. After
processed, the dimension of LN wafer is 10mm×10mm×50um. The surface of LN is very smooth, and the surface roughness is 1.63nm.The test shows that the disposed wafer’s peak value of pyroelectric signal is four times as much as that of undisposed one.